| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
| 2024/9/1 | 2DS-L: A dynamical system decomposition of signal approach to learning with application in time series prediction | Azizi, S. Pourmohammad | PHYSICA D-NONLINEAR PHENOMENA | | |
| 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | |
| 2006 | Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C. | Semiconductor Science and Technology | 2 | |
| 2011 | Cell-Temperature Determination in InGaP-(In)GaAs-Ge Triple-Junction Solar Cells | Yang, W. C.; Lo, C.; Wei, C. Y.; Wen-Shiung Lour | Ieee Electron Device Letters | | |
| 2007 | Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | | |
| 2007 | Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate | Hsu, M. K.; Chen, H. R.; Chiu, S. Y.; Chen, W. T.; Liu, W. C.; Tasi, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | | |
| 2011 | Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles | Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
| 2012 | Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers | Tsai, J. H.; Ye, S. S.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
| 2006 | Comparison of tuning performance characteristics of dual-emitter phototransistor with biased emitter and heterojunction phototransistor with biased base | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | 0 | |
| 1998 | Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors | Wen-Shiung Lour ; Lia, C. Y. | Semiconductor Science and Technology | 22 | |
| 2009 | Comprehensive investigation on planar type of Pd-GaN hydrogen sensors | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | International Journal of Hydrogen Energy | | |
| 2020 | Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents | Chia-Hua Huang; Hao Lo; Chieh Lo; Wen-Shiung Lour | IEEE J ELECTRON DEVI | 3 | |
| 2020 | Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents (vol 8, pg 92, 2020) | Huang, Chia-Hua; Lo, Hao; Lo, Chieh; Lour, Wen-Shiung | IEEE J ELECTRON DEVI | 0 | |
| 2009 | Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | | |
| 2024/9/1 | DeepEigen-Tabu: Deep Eigen Network Assisted Probabilistic Tabu Search for Massive MIMO Detection | Lu, Hoang-Yang ; Azizi, S. Pourmohammad ; Cheng, Shyi-Chyi | IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY | | |
| 1999 | Direct current and alternating current performance in InGaP/InxGa1-xAs FETs using airbridge gate with multiple piers | Chen, H. R.; Wu, M. Y.; Wen-Shiung Lour ; Hung, G. L.; Shih, Y. M. | Semiconductor Science and Technology | 7 | |
| 2007 | Dynamic performance of dual-emitter phototransistor as electro-optical switch | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | |
| 2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | | |
| 2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | | |
| 1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | |
