Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
2008 | Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy | Hsu, H. P.; Huang, Y. N.; Huang, Y. S.; Lin, Y. T.; Ma, T. C.; Lin, H. H.; Kwong-Kau Tiong ; Sitarek, P.; Misiewicz, J. | Journal of Applied Physics | | |
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy | Hsu, H. P.; Huang, Y. N.; Huang, Y. S.; Lin, Y. T.; Ma, T. C.; Lin, H. H.; Kwong-Kau Tiong ; Sitarek, P.; Misiewicz, J. | Physica Status Solidi a-Applications and Materials Science | | |