Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
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2015 | Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation | Yao, Y. C.; Huang, C. Y.; Tai-Yuan Lin ; Cheng, L. L.; Liu, C. Y.; Wang, M. T.; Hwang, J. M.; Lee, Y. J. | Microelectronic Engineering | 3 |