| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
| 2015 | Achieving graded refractive index by use of ZnO nanorods/TiO2 layer to enhance omnidirectional photovoltaic performances of InGaP/GaAs/Ge triple-junction solar cells | Tsai, M. T.; Yang, Z. P.; Jing, T. S.; Hsieh, H. H.; Yao, Y. C.; Tai-Yuan Lin ; Chen, Y. F.; Lee, Y. J. | Solar Energy Materials and Solar Cells | 17 | |
| 2014 | Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme | Huang, C. Y.; Lee, Y. J.; Tai-Yuan Lin ; Chang, S. L.; Lian, J. T.; Chen, N. C.; Yang, Y. J.; Hsiu-Mei Lin | Optics Letters | 10 | |
| 2014 | High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers | Lee, Y. J.; Yao, Y. C.; Huang, C. Y.; Tai-Yuan Lin ; Cheng, L. L.; Liu, C. Y.; Wang, M. T.; Hwang, J. M. | Nanoscale Research Letters | 26 | |
| 2014 | Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures | Huang, C. Y.; Yao, Y. C.; Lee, Y. J.; Tai-Yuan Lin ; Kao, W. J.; Yang, Y. J.; Shen, J. L.; Jih-Shang Hwang | Nanotechnology | | |
| 2015 | Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation | Yao, Y. C.; Huang, C. Y.; Tai-Yuan Lin ; Cheng, L. L.; Liu, C. Y.; Wang, M. T.; Hwang, J. M.; Lee, Y. J. | Microelectronic Engineering | 3 | |
| 2014 | Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition | Lee, Y. J.; Yang, Z. P.; Lo, F. Y.; Siao, J. J.; Xie, Z. H.; Chuang, Y. L.; Tai-Yuan Lin ; Sheu, J. K. | Apl Materials | 29 | |
