| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|
| 2014 | High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric | Dai, M. K.; Tai-Yuan Lin ; Yang, M. H.; Lee, C. K.; Chen, Y. F.; Chih-Ching Huang | Journal of Materials Chemistry C | 17 |
