| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
| 2006 | Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells | Lai, Y. L.; Liu, C. P.; Lin, Y. H.; Lin, R. M.; Lyu, D. Y.; Peng, Z. X.; Tai-Yuan Lin | Applied Physics Letters | | 29 | |
| 2009 | Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O | Yen, K. Y.; Liu, K. P.; Gong, J. R.; Tsai, K. Y.; Lyu, D. Y.; Tai-Yuan Lin ; Ni, G. Y.; Jih, F. W. | Journal of Materials Science-Materials in Electronics | | 1 | |
| 2008 | Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O | Lin, P. Y.; Gong, J. R.; Li, P. C.; Tai-Yuan Lin ; Lyu, D. Y.; Lin, D. Y.; Lin, H. J.; Li, T. C.; Chang, K. J.; Lin, W. J. | Journal of Crystal Growth | | 14 | |
| 2006 | Origins of efficient green light emission in phase-separated InGaN quantum wells | Lai, Y. L.; Liu, C. P.; Lin, Y. H.; Hsueh, T. H.; Lin, R. M.; Lyu, D. Y.; Peng, Z. X.; Tai-Yuan Lin | Nanotechnology | | 51 | |
| 2007 | Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (11(2)over-bar-0) sapphire substrates | Tai-Yuan Lin ; Chen, G. M.; Lyu, D. Y. | Solid State Communications | | 4 | |
| 2006 | Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots | Tai-Yuan Lin ; Lyu, D. Y.; Chang, J. ; Shen, J. L.; Chou, W. C. | Applied Physics Letters | | 9 | |
| 2009 | Self-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide | Lin, Y. T.; Chung, P. H.; Lai, H. W.; Su, H. L.; Lyu, D. Y.; Yen, K. Y.; Tai-Yuan Lin ; Kung, C. Y.; Gong, J. R. | Applied Surface Science | | 19 | |
