| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2006 | Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers | Shu, G. W.; Wu, P. F.; Liu, Y. W.; Wang, J. S.; Shen, J. L.; Tai-Yuan Lin ; Pong, P. J.; Chi, G. C.; Chang, H. J.; Chen, Y. F.; Lee, Y. C. | Journal of Physics-Condensed Matter | | 10 | |
| 2008 | Hot carrier photoluminescence in InN epilayers Hot carrier photoluminescence in InN epilayers | Yang, M. D.; Chen, Y. P.; Shu, G. W.; Shen, J. L.; Hung, S. C.; Chi, G. C.; Tai-Yuan Lin ; Lee, Y. C.; Chen, C. T.; Ko, C. H. | Applied Physics a-Materials Science & Processing | | 4 | |
| 2009 | Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters | Yang, M. D.; Wu, S. W.; Shu, G. W.; Wang, J. S.; Shen, J. L.; Wu, C. H.; Lin, C. A. J.; Chang, W. H.; Tai-Yuan Lin ; Lu, T. C.; Kuo, H. C. | Journal of Nanomaterials | | 2 | |
| 2010 | Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers | Yang, M. D.; Tong, S. C.; Chou, I. T.; Shu, G. W.; Shen, J. L.; Lee, Y. C.; Huang, Y. S.; Chen, Y. F.; Tai-Yuan Lin | Japanese Journal of Applied Physics | | 1 | |
| 2010 | Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers | Shu, G. W.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chen, J. F.; Tai-Yuan Lin ; Wu, C. H.; Huang, Y. H.; Yang, T. N. | Materials Science and Engineering B-Advanced Functional Solid-State Materials | | 5 | |
