第 1 到 3 筆結果,共 3 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | ||
2 | 2005 | Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation | Shih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. | Ieee Transactions on Electron Devices | ||
3 | 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics |