| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
1 | 2019 | Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers | Tsai, J. H.; Lin, P. S.; Wen-Shiung Lour ; Liu, W. C. | Ecs Journal of Solid State Science and Technology | | |
2 | 2013 | Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture | Lo, C.; Wei, C. Y.; Tsai, J. H.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
3 | 2012 | Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors | Lo, C.; Wei, C. Y.; Tsai, J. H.; Hsu, K. Y.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
4 | 2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | | |
5 | 2012 | An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage | Tsai, J. H.; Wen-Shiung Lour ; Chao, Y. T.; Ye, S. S.; Ma, Y. C.; Jhou, J. C.; Wu, Y. R.; Ou-Yang, J. J. | Thin Solid Films | | |
6 | 2012 | Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers | Tsai, J. H.; Ye, S. S.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
7 | 2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
8 | 2011 | Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles | Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
9 | 2011 | A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT) | Tsai, J. H.; Lee, C. S.; Wen-Shiung Lour ; Ma, Y. C.; Ye, S. S. | Semiconductors | | |
10 | 2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | | |
11 | 2010 | Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor | Tsai, J. H.; Wen-Shiung Lour ; Huang, C. H.; Dale, N. F.; Lee, Y. H.; Sheng, J. S.; Liu, W. C. | Solid-State Electronics | | |
12 | 2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | | |