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Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link | |
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1 | 2007 | Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate | Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; T Chen, W.; Chen, G. H.; Chang, Y. C.; Su, C. C.; Wen-Shiung Lour | Semiconductor Science and Technology |