第 1 到 16 筆結果,共 16 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | ||
2 | 2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | ||
3 | 2009 | Microwave complementary doped-channel field-effect transistors | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Liu, W. C.; Li, C. M.; Su, N. X.; Wu, Y. Z.; Huang, Y. S. | Superlattices and Microstructures | ||
4 | 2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | ||
5 | 2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | ||
6 | 2008 | Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | ||
7 | 2007 | Dynamic performance of dual-emitter phototransistor as electro-optical switch | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
8 | 2007 | Emitter-induced gain effects on dual-emitter phototransistor as an electrooptical switch | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Ieee Transactions on Electron Devices | ||
9 | 2007 | Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate | Hsu, M. K.; Chen, H. R.; Chiu, S. Y.; Chen, W. T.; Liu, W. C.; Tasi, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | ||
10 | 2007 | Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors | Chen, T. P.; Fu, S. I.; Liu, W. C.; Cheng, S. Y.; Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Journal of Applied Physics | ||
11 | 2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | ||
12 | 2007 | Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | ||
13 | 2007 | Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | ||
14 | 2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | ||
15 | 2006 | Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C. | Semiconductor Science and Technology | 2 | |
16 | 2000 | A New Air-Bridge Gate Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic Transistor | Chang, W. L.; Liu, W. C.; Wen-Shiung Lour ; Wang, W. C.; Pan, H. J.; Thei, K. B. | Japanese Journal of Applied Physics | 0 |