第 1 到 4 筆結果,共 4 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | ||
2 | 2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | ||
3 | 2009 | Microwave complementary doped-channel field-effect transistors | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Liu, W. C.; Li, C. M.; Su, N. X.; Wu, Y. Z.; Huang, Y. S. | Superlattices and Microstructures | ||
4 | 2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters |