第 1 到 15 筆結果,共 15 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2008 | Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | ||
2 | 2007 | Dynamic performance of dual-emitter phototransistor as electro-optical switch | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
3 | 2007 | Emitter-induced gain effects on dual-emitter phototransistor as an electrooptical switch | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Ieee Transactions on Electron Devices | ||
4 | 2007 | Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate | Hsu, M. K.; Chen, H. R.; Chiu, S. Y.; Chen, W. T.; Liu, W. C.; Tasi, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | ||
5 | 2007 | Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Tsai, J. H.; Wen-Shiung Lour | Journal of the Electrochemical Society | ||
6 | 2006 | Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance | Hsu, M. K.; Chen, H. R.; Chiou, S. Y.; Chen, W. T.; Chen, G. H.; Chang, Y. C.; Wen-Shiung Lour | Applied Physics Letters | 14 | |
7 | 2006 | Extrinsic base surface-passivated dual-emitter heterojunction phototransistors | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Superlattices and Microstructures | 2 | |
8 | 2006 | Comparison of tuning performance characteristics of dual-emitter phototransistor with biased emitter and heterojunction phototransistor with biased base | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | 0 | |
9 | 2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
10 | 2005 | Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
11 | 2005 | Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
12 | 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | ||
13 | 2005 | Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation | Shih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. | Ieee Transactions on Electron Devices | ||
14 | 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | ||
15 | 2004 | Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate | Shih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology |