第 1 到 18 筆結果,共 18 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
2 | 2005 | Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
3 | 2005 | Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
4 | 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | ||
5 | 2005 | Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation | Shih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. | Ieee Transactions on Electron Devices | ||
6 | 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | ||
7 | 2004 | Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | ||
8 | 2004 | Performance enhancement of double-emitter HPTs with different emitter-area ratios | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Electronics Letters | ||
9 | 2004 | Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate | Shih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | ||
10 | 2004 | Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Semiconductor Science and Technology | ||
11 | 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
12 | 2003 | Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs) | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Superlattices and Microstructures | ||
13 | 2003 | Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J.; Lour, W. S. | Ieee Transactions on Electron Devices | ||
14 | 2003 | New composite-emitter HBTs with reduced turn-on voltage and small offset voltage | Tsai, M. K.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J.; Lour, W. S. | Compound Semiconductors 2002 | ||
15 | 2002 | Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage | Lour, W. S.; Wu, Y. W.; Shih-Wei Tan ; Tsai, M. K.; Yang, Y. J. | Applied Physics Letters | ||
16 | 2002 | Investigation of self-aligned p(++)-GaAs/n-InGaP heterojunction field-effect transistors | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J. | Physica E-Low-Dimensional Systems & Nanostructures | ||
17 | 2002 | Depletion-mode and enhancement-mode InGaP/GaAs delta-HEMTs for low supply-voltage applications | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Lour, W. S.; Yang, Y. J. | Semiconductor Science and Technology | ||
18 | 2001 | Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J. | Semiconductor Science and Technology |