http://scholars.ntou.edu.tw/handle/123456789/10788| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chen, Y. S. | en_US |
| dc.contributor.author | Lee, H. Y. | en_US |
| dc.contributor.author | Chen, P. S. | en_US |
| dc.contributor.author | Liu, W. H. | en_US |
| dc.contributor.author | Wang, S. M. | en_US |
| dc.contributor.author | Gu, P. Y. | en_US |
| dc.contributor.author | Hsu, Y. Y. | en_US |
| dc.contributor.author | Chen-Han Tsai | en_US |
| dc.contributor.author | Chen, W. S. | en_US |
| dc.contributor.author | Chen, F. | en_US |
| dc.contributor.author | Tsai, M. J. | en_US |
| dc.contributor.author | Lien, C. | en_US |
| dc.date.accessioned | 2020-11-21T06:36:55Z | - |
| dc.date.available | 2020-11-21T06:36:55Z | - |
| dc.date.issued | 2011-11 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/10788 | - |
| dc.relation.ispartof | Ieee Electron Device Letters | en_US |
| dc.title | Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot | en_US |
| dc.type | journal article | en_US |
| dc.identifier.doi | 10.1109/led.2011.2166051 | - |
| dc.identifier.doi | <Go to ISI>://WOS:000296239500039 | - |
| dc.identifier.url | <Go to ISI>://WOS:000296239500039 | |
| dc.relation.journalvolume | 32 | en_US |
| dc.relation.journalissue | 11 | en_US |
| item.cerifentitytype | Publications | - |
| item.openairetype | journal article | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| crisitem.author.dept | College of Ocean Science and Resource | - |
| crisitem.author.dept | Department of Marine Environmental Informatics | - |
| crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
| crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
| crisitem.author.parentorg | College of Ocean Science and Resource | - |
| Appears in Collections: | 海洋環境資訊系 | |
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