Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/2005

Title:	Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition
Authors:	Huang, Y. C. Li, Z. Y. Weng, L. W. Uen, W. Y. Lan, S. M. Liao, S. M. Tai-Yuan Lin Huang, Y. H. Chen, J. W. Yang, T. N. Chiang, C. C.
Issue Date:	Nov-2009
Journal Volume:	27
Journal Issue:	6
Source:	Journal of Vacuum Science & Technology A
URI:	http://scholars.ntou.edu.tw/handle/123456789/2005
ISSN:	0734-2101
DOI:	10.1116/1.3212895 ://WOS:000271284500002
Appears in Collections:	光電與材料科技學系

Show full item record

Last Week
0

Last month
0

checked on Jun 27, 2023

Last Week
0

Last month
0

checked on Oct 13, 2022

Check

DSpace CRIS