http://scholars.ntou.edu.tw/handle/123456789/20578
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Tzu-Hsuan | en_US |
dc.contributor.author | Lo, Hao | en_US |
dc.contributor.author | Lo, Chieh | en_US |
dc.contributor.author | Wu, Meng-Chyi | en_US |
dc.contributor.author | W.S. Lour | en_US |
dc.date.accessioned | 2022-02-17T05:12:59Z | - |
dc.date.available | 2022-02-17T05:12:59Z | - |
dc.date.issued | 2016-10-01 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/20578 | - |
dc.description.abstract | A GaAs-based p-i-n structure which is layer-compatible to a commercial heterojunction bipolar transistor (HBT) was employed to fabricate a visible-light position-sensitive detector (PSD) with a long distance of 14mm between two coplanar contacts. Sensing properties of the GaAs p-i-n PSD operated in the lateral photovoltaic mode were obtained by using visible-light sources with a power of 1-3 mW. The measured sensitivity was 14.3 +/- 0.05 mV/mm, resulting in a sensitivity-distance product of 200 +/- 0.5 mV, for the fabricated PSD responding to a 3 mW 638 nm red light. The estimated nonlinearities were as small as 0.9 +/- 0.05%-1.9 +/- 0.05%, 1.8 +/- 0.05%-2.3 +/- 0.05%, and 0.3 +/- 0.05%-1.3 +/- 0.05% for the PSD tested under the 405 nm, 532 nm, and 638 nm lights, respectively. Such a long linear distance is possibly attributed to carrier's large diffusion lengths associated with the GaAs p-i-n layers. Another PSD was fabricated with three-terminal configuration using the same GaAs-based p-i-n structure. Thus, the three-terminal PSD can be operated in both of the lateral and transverse photovoltaic modes. A PSD's differential output from two transverse photovoltaic voltages showed a sensitivity of 11.1 +/- 0.05 mV/mm with a 0.3 +/- 0.05% nonlinearity. Furthermore, transient responses of the PSD's LPV to the illumination and interdiction of the visible lights were included. Response time of 60 +/- 4 mu s for the 532 nm green light compared to those of 134 +/- 2 and 99 +/- 2 mu s for the 405 nm blue and 638 nm red lights, respectively, will be investigated to realize the proposed visible-light PSD. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.relation.ispartof | SENSOR ACTUAT A-PHYS | en_US |
dc.subject | RESISTIVE LAYER | en_US |
dc.subject | FILM | en_US |
dc.subject | SI | en_US |
dc.subject | SILICON | en_US |
dc.subject | WAVELENGTH | en_US |
dc.subject | TRANSPORT | en_US |
dc.title | Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD) | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | 10.1016/j.sna.2016.09.002 | - |
dc.relation.journalvolume | 249 | en_US |
dc.relation.pages | 256-262 | en_US |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en_US | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | Department of Electrical Engineering | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 07 AFFORDABLE & CLEAN ENERGY 電機工程學系 |
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