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  1. National Taiwan Ocean University Research Hub
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  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/23055
DC 欄位值語言
dc.contributor.authorCheng-Ying Chenen_US
dc.contributor.authorYen-Chun Chaoen_US
dc.contributor.authorChin-An Linen_US
dc.contributor.authorJian-Wei Loen_US
dc.contributor.authorHau Heen_US
dc.date.accessioned2022-11-11T00:57:56Z-
dc.date.available2022-11-11T00:57:56Z-
dc.date.issued2010-01-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/23055-
dc.descriptionHong Kong, China 03-08 January 2010en_US
dc.description.abstractWe demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.relation.ispartof2010 3rd International Nanoelectronics Conference (INEC)en_US
dc.titleCharacterization of Er-doped ZnO nanorod arrays for broadband antireflectionen_US
dc.typeconference paperen_US
dc.relation.conferenceNanoelectronics Conference (INEC), 2010 3rd Internationalen_US
dc.identifier.doi10.1109/INEC.2010.5424868-
dc.relation.pages1339-1340en_US
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_5794-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en_US-
item.openairetypeconference paper-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptCollege of Engineering-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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