http://scholars.ntou.edu.tw/handle/123456789/23628
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Chia Hua | en_US |
dc.contributor.author | Tan, Shih Wei | en_US |
dc.contributor.author | Lo, Hao | en_US |
dc.contributor.author | Lo, Chieh | en_US |
dc.contributor.author | Lour, Wen Shiung | en_US |
dc.date.accessioned | 2023-02-15T01:17:39Z | - |
dc.date.available | 2023-02-15T01:17:39Z | - |
dc.date.issued | 2022-11-29 | - |
dc.identifier.issn | 0360-3199 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/23628 | - |
dc.description.abstract | A planar-type metal-semiconductor-metal (MSM) hydrogen sensor forming on the collector layer was employed as an extended base (EB) of the InGaP-GaAs heterojunction bipolar transistors (HBTs). Then, hydrogen sensing transistors integrated were proposed and studied. After introducing sensing properties of the EB-hydrogen sensor, various sensing current gains defined were addressed for our hydrogen sensing transistor. Instead of the base current, N2 and/or hydrogen-containing gases were used as a parameter while measuring common-emitter characteristics of the hydrogen sensing transistor at various temperatures. Experimental results show that maximum sensing base current gains in 1% H2/N2 is 330 at 25 degrees C while it is enhanced to 1800 at 50 degrees C, then to 2300 at 80 degrees C, and finally to 2800 at 110 degrees C. In contrast, a peak sensing collector current gain is as high as 1.2 x 105 (4.3 x 104) in 1% (0.01%) at 110 degrees C. In addition, response times obtained from the sensing diode (base) and collector currents in 0.01% H2/N2 are 485 (490) and 745 s at 25 degrees C. Together with important features including one power supply and low-power consumption, the proposed hydrogen sensing transistor is very promising for applications in detecting hydrogen. (c) 2022 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | English | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.relation.ispartof | INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | en_US |
dc.subject | Hydrogen sensor | en_US |
dc.subject | InGaP-GaAs | en_US |
dc.subject | Bipolar transistor | en_US |
dc.subject | Metal-semiconductor | en_US |
dc.subject | Current gain | en_US |
dc.title | Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction transistors | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | 10.1016/j.ijhydene.2022.09.082 | - |
dc.identifier.isi | WOS:000883827300007 | - |
dc.relation.journalvolume | 47 | en_US |
dc.relation.journalissue | 92 | en_US |
dc.relation.pages | 39276-39287 | en_US |
dc.identifier.eissn | 1879-3487 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.languageiso639-1 | English | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | Department of Electrical Engineering | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.dept | Center of Excellence for Ocean Engineering | - |
crisitem.author.dept | Data Analysis and Administrative Support | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | Center of Excellence for Ocean Engineering | - |
顯示於: | 電機工程學系 |
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