http://scholars.ntou.edu.tw/handle/123456789/4458
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu Kai | en_US |
dc.contributor.author | Hsieh, H. H. | en_US |
dc.contributor.author | Chen, Y. R. | en_US |
dc.contributor.author | Wang, Y. F. | en_US |
dc.contributor.author | Dong, C. | en_US |
dc.date.accessioned | 2020-11-19T00:37:48Z | - |
dc.date.available | 2020-11-19T00:37:48Z | - |
dc.date.issued | 2007-11 | - |
dc.identifier.issn | 0966-9795 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/4458 | - |
dc.description.abstract | The oxidation behavior of the Zr53Ni23.5Al23.5 bulk metallic glass (BMG) and its crystalline counterpart was investigated over the temperature range of 400–600 °C in dry air and pure oxygen. In general, the oxidation kinetics of BMG followed the single- or two-stage parabolic rate law at T ≤ 500 °C, with rate constants (Kp values) generally increased with temperature. Conversely, three-stage parabolic kinetics were observed for BMG at T ≥ 550 °C, with Kp values decreased with increasing temperature. The oxidation rate constants for the BMG alloy are slightly higher than those for crystalline alloy at T ≤ 500 °C. In addition, Kp values of BMG were nearly independent of partial pressure of oxygen, implying a typical scaling behavior with a n-type semiconductivity. The scales formed on the BMG is temperature-dependent, consisting mainly of tetragonal-ZrO2 (t-ZrO2) and minor amounts of Al2O3 at T ≤ 475 °C. At higher temperatures (T ≥ 500 °C), some monoclinic-ZrO2 (m-ZrO2) were also detected, and its amounts increased with increasing temperature. The BMG substrate began to form the crystalline Zr2Ni, Zr2Al, and ZrNiAl phases beneath the scales after oxidation at T ≥ 450 °C. | en_US |
dc.language.iso | en_US | en_US |
dc.relation.ispartof | Intermetallics | en_US |
dc.subject | B. Oxidation | en_US |
dc.subject | B. Glasses, metallic | en_US |
dc.subject | B. Phase transformations | en_US |
dc.title | Oxidation behavior of an Zr53Ni23.5Al23.5 bulk metallic glass at 400–600 °C | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | <Go to ISI>://WOS:000250419900009 | - |
dc.identifier.doi | 10.1016/j.intermet.2007.05.006 | - |
dc.identifier.doi | <Go to ISI>://WOS:000250419900009 | - |
dc.identifier.doi | <Go to ISI>://WOS:000250419900009 | - |
dc.identifier.url | <Go to ISI>://WOS:000250419900009 | |
dc.relation.journalvolume | 15 | en_US |
dc.relation.journalissue | 11 | en_US |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en_US | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.orcid | https://orcid.org/0000-0001-8791-7775 | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電與材料科技學系 |
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