Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/5787

Title:	Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors
Authors:	Lee, H. Y. In-Jen Lin Shieh, H. M. Lee, C. T.
Issue Date:	Aug-2002
Journal Volume:	46
Journal Issue:	8
Source:	Solid-State Electronics
URI:	http://scholars.ntou.edu.tw/handle/123456789/5787
ISSN:	0038-1101
DOI:	10.1016/s0038-1101(02)00044-8 ://WOS:000177094400001
Appears in Collections:	資訊工程學系

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