Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
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2006 | Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) | Chen, C. W.; Lai, P. H.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, A. C. | Semiconductor Science and Technology | ||
2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | ||
2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | ||
2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | ||
2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
2012 | Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors | Lo, C.; Wei, C. Y.; Tsai, J. H.; Hsu, K. Y.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy |