公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 |
2014 | Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Chen, W. S.; Tsai, K. H.; Gu, P. Y.; Wu, T. Y.; Chen-Han Tsai ; Rahaman, S. Z.; Lin, Y. D.; Chen, F.; Tsai, M. J.; Ku, T. K. | Ieee Electron Device Letters | | |
2011 | Resistance switching for RRAM applications | Chen, F. T.; Lee, H.; Chen, Y. S.; Hsu, Y. Y.; Zhang, L. J.; Chen, P. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Sheu, S.; Tsai, M. J.; Huang, R. | Science China-Information Sciences | | |
2011 | Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Liu, W. H.; Wang, S. M.; Gu, P. Y.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, W. S.; Chen, F.; Tsai, M. J.; Lien, C. | Ieee Electron Device Letters | | |