公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 |
2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | | |
2007 | Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors | Chen, T. P.; Fu, S. I.; Liu, W. C.; Cheng, S. Y.; Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Journal of Applied Physics | | |
2006 | Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) | Chen, C. W.; Lai, P. H.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, A. C. | Semiconductor Science and Technology | | |
2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | | |
2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | | |