| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2016 | Air Oxidation of a Ni53Nb20Ti10Zr8Co6Cu3 Glassy Alloy at 400–550 °C | Wu Kai ; Chen, Y. T.; Zheng, F. P.; Chen, W. S.; Rong-Tan Huang ; Leu-Wen Tsay ; Huang, H. H.; Zhang, W. | Oxidation of Metals | | 3 | |
| 2013 | Air-oxidation behavior of a [(Fe50Co50)(75)B20Si5](96)Nb-4 bulk metallic glass at 500-650 degrees C | Wu Kai ; Wu, Y. H.; Chen, W. S.; Tsay, L. W. ; Jia, H. L.; Liaw, P. K. | Corrosion Science | | | |
| 2011 | Air-oxidation of a Co-based amorphous ribbon at 400–600 °C | Wu Kai ; Lin, P. C.; Chen, W. S.; Kao, P. C.; Liaw, P. K.; Rong-Tan Huang | Journal of Alloys and Compounds | | | |
| 2012 | Air-oxidation of a Cu50Zr50 binary amorphous ribbon at 350–425 °C | Wu Kai ; Chen, W. S.; Wu, Y. H.; Lin, P. C.; Chuang, C. P.; Liaw, P. K. | Journal of Alloys and Compounds | | | |
| 2012 | Air-oxidation of a Zr50Cu43Al7 bulk metallic glass at 400–500 °C | Wu Kai ; Lin, P. C.; Chen, W. S.; Chuang, C. P.; Liaw, P. K.; Huang, H. H.; Hsieh, H. H. | Corrosion Science | | | |
| 2011 | Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films | Chen, W. S.; Chia-Yen Hu; Chiem-Lum Huang; Wu Kai ; Yuan-Chang Liang | Ceramics International | | | |
| 2019 | Cross-linkable hole transporting layers boost operational stability of high-performance quantum dot light-emitting device | Chao, S. W.; Chen, W. S.; Wen-Yi Hung ; Chen, Y. Y.; Lin, Y. M.; Wong, K. T.; Chou, P. T. | Organic Electronics | | | |
| 2013 | The Effect of Er Addition on the Air-Oxidation of a Zr55Cu30Al10Ni5-Based Bulk Metallic Glass | Wu Kai ; Ren, I. F.; Chen, W. S.; Kao, P. C.; Xing, D.; Liaw, P. K.; Rong-Tan Huang | Oxidation of Metals | | | |
| 2011 | Experimental investigation of the reliability issue of RRAM based on high resistance state conduction | Zhang, L. J.; Hsu, Y. Y.; Chen, F. T.; Lee, H. Y.; Chen, Y. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Huang, R.; Tsai, M. J. | Nanotechnology | | | |
| 2011 | Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Liu, W. H.; Chen, W. S.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, F.; Tsai, M. J.; Lien, C. H. | Ieee Electron Device Letters | | | |
| 2014 | Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory | Lee, H. Y.; Chen, Y. S.; Chen, P. S.; Chen-Han Tsai ; Gu, P. Y.; Wu, T. Y.; Tsai, K. H.; Rahaman, S. Z.; Chen, W. S.; Chen, F.; Tsai, M. J.; Lee, M. H.; Ku, T. K. | Japanese Journal of Applied Physics | | | |
| 2013 | Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices | Chen, P. S.; Chen, Y. S.; Lee, H. Y.; Wu, T. Y.; Tsai, K. H.; Gu, P. Y.; Chen, W. S.; Chen-Han Tsai ; Chen, F.; Tsai, M. J. | Microelectronic Engineering | | | |
| 2014 | Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Chen, W. S.; Tsai, K. H.; Gu, P. Y.; Wu, T. Y.; Chen-Han Tsai ; Rahaman, S. Z.; Lin, Y. D.; Chen, F.; Tsai, M. J.; Ku, T. K. | Ieee Electron Device Letters | | | |
| 2011 | Resistance switching for RRAM applications | Chen, F. T.; Lee, H.; Chen, Y. S.; Hsu, Y. Y.; Zhang, L. J.; Chen, P. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Sheu, S.; Tsai, M. J.; Huang, R. | Science China-Information Sciences | | | |
| 2011 | Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Liu, W. H.; Wang, S. M.; Gu, P. Y.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, W. S.; Chen, F.; Tsai, M. J.; Lien, C. | Ieee Electron Device Letters | | | |
| 2010 | The oxidation behavior of a Ti50Cu28Ni15Sn7 bulk metallic glass at 400-500 degrees C | Kao, P. C.; Chen, W. S.; Lin, C. L.; Xiao, Z. H.; Hsu, C. F.; Pee-Yew Lee ; Wu Kai | Journal of Alloys and Compounds | | 8 | |
