| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | | |
| 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | | | |
| 2003 | Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs) | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Superlattices and Microstructures | | | |
| 2004 | Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate | Shih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | | | |
| 2004 | Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Semiconductor Science and Technology | | | |
