| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation | Shih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. | Ieee Transactions on Electron Devices | | | |
| 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | | | |
| 2004 | Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | | | |
| 2004 | Performance enhancement of double-emitter HPTs with different emitter-area ratios | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Electronics Letters | | | |
| 2004 | Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate | Shih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | | | |
| 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | | | |
