| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | | |
| 2002 | Depletion-mode and enhancement-mode InGaP/GaAs delta-HEMTs for low supply-voltage applications | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Lour, W. S.; Yang, Y. J. | Semiconductor Science and Technology | | | |
| 2001 | Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J. | Semiconductor Science and Technology | | | |
| 2002 | Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage | Lour, W. S.; Wu, Y. W.; Shih-Wei Tan ; Tsai, M. K.; Yang, Y. J. | Applied Physics Letters | | | |
| 2003 | Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J.; Lour, W. S. | Ieee Transactions on Electron Devices | | | |
| 2002 | Investigation of self-aligned p(++)-GaAs/n-InGaP heterojunction field-effect transistors | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J. | Physica E-Low-Dimensional Systems & Nanostructures | | | |
| 2003 | New composite-emitter HBTs with reduced turn-on voltage and small offset voltage | Tsai, M. K.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J.; Lour, W. S. | Compound Semiconductors 2002 | | | |
