| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | | |
| 2011 | Circulation and Intrusions Northeast of Taiwan: Chasing and Predicting Uncertainty in the Cold Dome | Gawarkiewicz, G.; Jan, S.; Lermusiaux, P. F. J.; McClean, J. L.; Centurioni, L.; Taylor, K.; Cornuelle, B.; Duda, T. F.; Wang, J.; Yang, Y. J.; Sanford, T.; Lien, R. C.; Lee, C.; Ming-An Lee ; Leslie, W.; Haley, P. J.; Niiler, P. P.; Gopalakrishnan, G.; Velez-Belchi, P.; Lee, D. K.; Kim, Y. Y. | Oceanography | | | |
| 2002 | Depletion-mode and enhancement-mode InGaP/GaAs delta-HEMTs for low supply-voltage applications | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Lour, W. S.; Yang, Y. J. | Semiconductor Science and Technology | | | |
| 2014 | Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme | Huang, C. Y.; Lee, Y. J.; Tai-Yuan Lin ; Chang, S. L.; Lian, J. T.; Chen, N. C.; Yang, Y. J.; Hsiu-Mei Lin | Optics Letters | | | |
| 2001 | Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J. | Semiconductor Science and Technology | | | |
| 2002 | Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage | Lour, W. S.; Wu, Y. W.; Shih-Wei Tan ; Tsai, M. K.; Yang, Y. J. | Applied Physics Letters | | | |
| 2011 | Efficient Light Harvesting by Well-Aligned In2O3 Nanopushpins as Antireflection Layer on Si Solar Cells | Huang, C. Y.; Lin, G. C.; Yeun-Jung Wu ; Yang, Y. J.; Chen, Y. F.; Tai-Yuan Lin | Journal of Physical Chemistry C | | | |
| 2003 | Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation | Tsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J.; Lour, W. S. | Ieee Transactions on Electron Devices | | | |
| 2002 | Investigation of self-aligned p(++)-GaAs/n-InGaP heterojunction field-effect transistors | Lour, W. S.; Tsai, M. K.; Chen, K. C.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J. | Physica E-Low-Dimensional Systems & Nanostructures | | | |
| 2014 | Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures | Huang, C. Y.; Yao, Y. C.; Lee, Y. J.; Tai-Yuan Lin ; Kao, W. J.; Yang, Y. J.; Shen, J. L.; Jih-Shang Hwang | Nanotechnology | | | |
| 2003 | New composite-emitter HBTs with reduced turn-on voltage and small offset voltage | Tsai, M. K.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J.; Lour, W. S. | Compound Semiconductors 2002 | | | |
