| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2011 | Experimental investigation of the reliability issue of RRAM based on high resistance state conduction | Zhang, L. J.; Hsu, Y. Y.; Chen, F. T.; Lee, H. Y.; Chen, Y. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Huang, R.; Tsai, M. J. | Nanotechnology | | | |
| 2011 | Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Liu, W. H.; Chen, W. S.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, F.; Tsai, M. J.; Lien, C. H. | Ieee Electron Device Letters | | | |
| 2014 | Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory | Lee, H. Y.; Chen, Y. S.; Chen, P. S.; Chen-Han Tsai ; Gu, P. Y.; Wu, T. Y.; Tsai, K. H.; Rahaman, S. Z.; Chen, W. S.; Chen, F.; Tsai, M. J.; Lee, M. H.; Ku, T. K. | Japanese Journal of Applied Physics | | | |
| 2013 | Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices | Chen, P. S.; Chen, Y. S.; Lee, H. Y.; Wu, T. Y.; Tsai, K. H.; Gu, P. Y.; Chen, W. S.; Chen-Han Tsai ; Chen, F.; Tsai, M. J. | Microelectronic Engineering | | | |
| 2014 | Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Chen, W. S.; Tsai, K. H.; Gu, P. Y.; Wu, T. Y.; Chen-Han Tsai ; Rahaman, S. Z.; Lin, Y. D.; Chen, F.; Tsai, M. J.; Ku, T. K. | Ieee Electron Device Letters | | | |
| 2011 | Resistance switching for RRAM applications | Chen, F. T.; Lee, H.; Chen, Y. S.; Hsu, Y. Y.; Zhang, L. J.; Chen, P. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Sheu, S.; Tsai, M. J.; Huang, R. | Science China-Information Sciences | | | |
| 2011 | Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Liu, W. H.; Wang, S. M.; Gu, P. Y.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, W. S.; Chen, F.; Tsai, M. J.; Lien, C. | Ieee Electron Device Letters | | | |
