| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
| 2004 | Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films | Gong, J. R.; Huang, C. W.; Tseng, S. F.; Tai-Yuan Lin ; Lin, K. M.; Liao, W. T.; Tsai, Y. L.; Shi, B. H.; Wang, C. L. | Journal of Crystal Growth | | 9 | |
| 2003 | Effects of Al-containing intermediate III-nitride strained multilayers on the threading dislocation density and optical properties of GaN films | Gong, J. R.; Tseng, S. F.; Huang, C. W.; Tsai, Y. L.; Liao, W. T.; Wang, C. L.; Shi, B. H.; Tai-Yuan Lin | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | 11 | |
| 2006 | Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers | Wang, C. L.; Gong, J. R.; Yeh, M. F.; Wu, B. J.; Liao, W. T.; Tai-Yuan Lin ; Lin, C. K. | Ieee Photonics Technology Letters | | 6 | |
| 2006 | Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films | Wang, C. L.; Wang, W. L.; Liao, W. T.; Gong, J. R.; Lin, C. K.; Tai-Yuan Lin | Journal of Crystal Growth | | 0 | |
| 2006 | On the characteristics of AlGaN films grown on (111) and (001)Si substrates | Wang, C. L.; Gong, J. R.; Liao, W. T.; Wang, W. L.; Tai-Yuan Lin ; Lin, C. K. | Solid State Communications | | 1 | |
