| 2014 | Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory | Lee, H. Y.; Chen, Y. S.; Chen, P. S.; Chen-Han Tsai ; Gu, P. Y.; Wu, T. Y.; Tsai, K. H.; Rahaman, S. Z.; Chen, W. S.; Chen, F.; Tsai, M. J.; Lee, M. H.; Ku, T. K. | Japanese Journal of Applied Physics | | | |
| 2014 | Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Chen, W. S.; Tsai, K. H.; Gu, P. Y.; Wu, T. Y.; Chen-Han Tsai ; Rahaman, S. Z.; Lin, Y. D.; Chen, F.; Tsai, M. J.; Ku, T. K. | Ieee Electron Device Letters | | | |
