| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|
| 2007 | Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (11(2)over-bar-0) sapphire substrates | Tai-Yuan Lin ; Chen, G. M.; Lyu, D. Y. | Solid State Communications | 4 |
