| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2011 | Experimental investigation of the reliability issue of RRAM based on high resistance state conduction | Zhang, L. J.; Hsu, Y. Y.; Chen, F. T.; Lee, H. Y.; Chen, Y. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Huang, R.; Tsai, M. J. | Nanotechnology | | | |
| 2011 | Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Liu, W. H.; Chen, W. S.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, F.; Tsai, M. J.; Lien, C. H. | Ieee Electron Device Letters | | | |
| 2011 | Resistance switching for RRAM applications | Chen, F. T.; Lee, H.; Chen, Y. S.; Hsu, Y. Y.; Zhang, L. J.; Chen, P. S.; Chen, W. S.; Gu, P. Y.; Liu, W. H.; Wang, S. M.; Chen-Han Tsai ; Sheu, S.; Tsai, M. J.; Huang, R. | Science China-Information Sciences | | | |
| 2011 | Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Liu, W. H.; Wang, S. M.; Gu, P. Y.; Hsu, Y. Y.; Chen-Han Tsai ; Chen, W. S.; Chen, F.; Tsai, M. J.; Lien, C. | Ieee Electron Device Letters | | | |
| 2008 | Suppressing series resistance in organic solar cells by oxygen plasma treatment | Lin, C. H.; Tseng, S. C.; Liu, Y. K.; Tai, Y.; Chattopadhyay, S.; Lin, C. F.; Lee, J. H.; Jih-Shang Hwang ; Hsu, Y. Y.; Chen, L. C.; Chen, W. C.; Chen, K. H. | Applied Physics Letters | | | |
| 2011 | Wear behavior of Er-bearing Cu-based amorphous/crystal BMG composite under oil lubrication | Chau-Chang Chou ; Chung, H. H.; Liaw, P. K.; Liou, Y.; Huang, J. C.; Hsu, Y. Y.; Shing-Hoa Wang | Intermetallics | | 11 | |
