| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2006 | Growth and properties of single phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor | D. Y. Lyu; T. Y. Lin ; J. H. Lin; S. C. Tseng; J. S. Hwang; H. P. Chiang |