Study on Plane Milling Type Precision System (I)

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Project title

Code/計畫編號

NSC88-2212-E019-012

Translated Name/計畫中文名

薄板工件之整合精密拋光系統研究---子計畫IV：平銑削式精密加工系統之研究(I)

Funding Organization/主管機關

National Science and Technology Council

Co-Investigator(s)/共同執行人

王星豪

Department/Unit

Department of Mechanical and Mechatronic Engineering

Website

https://www.grb.gov.tw/search/planDetail?id=419128

Year

1999

Start date/計畫起

01-08-1998

Expected Completion/計畫迄

01-07-1999

Co-Investigator(s)

Shing-Hoa Wang

Bugetid/研究經費

424千元

ResearchField/研究領域

機械工程

本子計畫為一個三年期的計畫,其目的在於發展一種平銑削式的精密加工系統,以應用於大尺寸晶圓的加工。其刀具系統為一圓筒形的金屬結合超級磨料(如鑽石或氯化硼)砂輪,並輔以電解式線上削銳(Electrolytic in-process dressing,ELID)裝置,金屬結合砂輪得以在磨削過程中保持銳利,而能夠進行穩定與持續的磨削加工。由於所使用之超級磨料顆粒非常細小,故加工後所形成之破壞層遠比傳統的加工方式少,因此能夠取代傳統的晶圓加工中的拉磨(Lapping)與蝕刻(Etching),而得到高平整度與最少的破壞層的晶圓表面。在第一年的計劃中,主要的工作為設計與組裝系統的硬體設備,並進行實驗規劃。 The purpose of this three-year project is to develop a plain milling type precision machining system to be used in the machining of large-size silicon wafers. The tool system is a cylindrical shaped grinding wheel which has metal bonded superabrasives such as diamond and CBN. The system is equipped with an electrolytic in-process dressing (ELID) device, so that the metal bonded superabrasive wheel will be electrolytically dressed during the grinding process, and therefore the grinding process can proceed steadily and continuously. Because the size of the superabrasives is very small, the damage layer is much smaller than that of the conventional grinding method. Therefore, the system may replace the lapping and etching processes in the conventional wafer process and obtain high flatness and minimum damage layer. In the first year study of the project, the system hardware was designed and assembled and a series of experiments was designed.

Keyword(s)

電解削銳
研磨
晶圓
Electrolytic dressing
Lapping
Wafer

DSpace CRIS

Study on Plane Milling Type Precision System (I)

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