http://scholars.ntou.edu.tw/handle/123456789/17374
標題: | Influence of N2O/TEGa Ratio on Deposition of beta-Ga2O3 Films and Performance of Au-beta-Ga2O3-Au Solar-Blind Photodetectors | 作者: | Huang, Chun-Ying Liu, Yen-Yang Lin, Pei-Te Lin, Guan-Yu Chou, Cheng-Ping Liao, Pei-Chun Hsu, Feng-Hsuan Peng, Yu-Hsiang Huang, Zi-Ling Lin, Tai-Yuan Gong, Jyh-Rong |
公開日期: | 1-五月-2021 | 出版社: | ELECTROCHEMICAL SOC INC | 卷: | 10 | 期: | 5 | 來源出版物: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 摘要: | In this study, a series of beta-Ga2O3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N2O) as precursors to explore the effect of N2O/TEGa ratio on the characteristics of beta-Ga2O3 films. A metal/semiconductor/metal (MSM)-type solar blind ultraviolet (UV) photodetector (PD) is fabricated using as-prepared beta-Ga2O3 film. It is found that an increment of N2O/TEGa ratio tends to suppress the oxygen vacancies in beta-Ga2O3 film so the device performance can be significantly improved. This work gives a deep insight into the impact of TEGa/N2O ratio for depositing beta-Ga2O3 on the film quality, the surface morphology, the chemical composition and the device performance for UV PDs. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/17374 | ISSN: | 2162-8769 | DOI: | 10.1149/2162-8777/abfa2b |
顯示於: | 光電與材料科技學系 |
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