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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/2034
Title: Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (11(2)over-bar-0) sapphire substrates
Authors: Tai-Yuan Lin 
Chen, G. M.
Lyu, D. Y.
Issue Date: Apr-2007
Journal Volume: 142
Journal Issue: 4
Source: Solid State Communications
URI: http://scholars.ntou.edu.tw/handle/123456789/2034
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2007.01.038
://WOS:000246042800012
Appears in Collections:光電與材料科技學系

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