http://scholars.ntou.edu.tw/handle/123456789/22402
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Li-Chun | en_US |
dc.contributor.author | Sung, Ming-Ching | en_US |
dc.contributor.author | Chu, Li-Heng | en_US |
dc.contributor.author | Chen, Yung-, I | en_US |
dc.date.accessioned | 2022-10-04T06:12:40Z | - |
dc.date.available | 2022-10-04T06:12:40Z | - |
dc.date.issued | 2020-12-01 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/22402 | - |
dc.description.abstract | The reactive gas flow ratio and substrate bias voltage are crucial sputtering parameters for fabricating transition metal nitride films. In this study, W-N films were prepared using sputtering with nitrogen flow ratios (f) of 0.1-0.5. W-N and W-Si-N films were then prepared using an f level of 0.4 and substrate bias varying from 0 to -150 V by using sputtering and co-sputtering, respectively. The variations in phase structures, bonding characteristics, mechanical properties, and wear resistance of the W-N and W-Si-N films were investigated. The W-N films prepared with nitrogen flow ratios of 0.1-0.2, 0.3, and 0.4-0.5 displayed crystalline W, amorphous W-N, and crystalline W2N, respectively. The W-N films prepared using a nitrogen flow ratio of 0.4 and substrate bias voltages of -50 and -100 V exhibited favorable mechanical properties and high wear resistance. The mechanical properties of the amorphous W-Si-N films were not related to the magnitude of the substrate bias. | en_US |
dc.language.iso | English | en_US |
dc.publisher | MDPI | en_US |
dc.relation.ispartof | COATINGS | en_US |
dc.subject | bonding characteristics | en_US |
dc.subject | mechanical properties | en_US |
dc.subject | nitrogen flow ratio | en_US |
dc.subject | substrate bias | en_US |
dc.subject | sputtering | en_US |
dc.title | Effects of the Nitrogen Flow Ratio and Substrate Bias on the Mechanical Properties of W-N and W-Si-N Films | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | 10.3390/coatings10121252 | - |
dc.identifier.isi | WOS:000602142800001 | - |
dc.relation.journalvolume | 10 | en_US |
dc.relation.journalissue | 12 | en_US |
dc.identifier.eissn | 2079-6412 | - |
item.languageiso639-1 | English | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.orcid | 0000-0003-0689-5709 | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電與材料科技學系 |
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