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  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/22452
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dc.contributor.authorLin, T. N.en_US
dc.contributor.authorSantiago, S. R. M.en_US
dc.contributor.authorCaigas, S. P.en_US
dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorLin, T. Y.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2022-10-04T06:12:48Z-
dc.date.available2022-10-04T06:12:48Z-
dc.date.issued2019-11-22-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/22452-
dc.description.abstractDue to strong Coulomb interactions, reduced screening effects, and quantum confinement, transition-metal dichalcogenide (TMD) monolayer quantum disks (MQDs) are expected to exhibit large exciton binding energy, which is beneficial for the investigation of many-body physics at room temperature. Here, we report the first observations of room-temperature many-body effects in tungsten disulfide (WS2) MQDs by both optical measurements and theoretical studies. The band-gap renormalization in WS2 MQDs was about 250 +/- 15 meV as the carrier density was increased from 0.6(+/- 0.2) x 10(12) to 8.3(+/- 0.2) x 10(12) cm(-2). We observed a striking exciton binding energy as large as 990 +/- 30 meV at the lowest carrier density, which is larger than that in WS2 monolayers. The huge exciton binding energy in WS2 MQDs is attributed to the extra quantum confinement in the lateral dimension. The band-gap renormalization and exciton binding energies are explained using efficient reduced screening. On the basis of the Debye screening formula, the Mott density in WS2 MQDs was estimated to be -3.95 x 10(13) cm(-2). Understanding and manipulation of the many-body effects in two-dimensional materials may open up new possibilities for developing exciton-based optoelectronic devices.en_US
dc.language.isoEnglishen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.relation.ispartofNPJ 2D MATERIALS AND APPLICATIONSen_US
dc.titleMany-body effects in doped WS2 monolayer quantum disks at room temperatureen_US
dc.typejournal articleen_US
dc.identifier.doi10.1038/s41699-019-0129-z-
dc.identifier.isiWOS:000503004300001-
dc.relation.journalvolume3en_US
dc.identifier.eissn2397-7132-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.languageiso639-1English-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypejournal article-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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