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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/22783
Title: Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitters on a Three-Dimensional Substrate
Authors: Chiao-Yun Chang 
Hsiang-Ting Lin
Ming-Sheng Lai
Cheng-Li Yu
Chong-Rong Wu
He-Chun Chou
Shih-Yen Lin
Chi Chen
Min-Hsiung Shih
Issue Date: Jul-2019
Publisher: AMER CHEMICAL SOC
Journal Volume: 11
Journal Issue: 29
Start page/Pages: 26243-26249
Source: ACS APPLIED MATERIALS & INTERFACES
Abstract: 
Atomically thin membranes of two-dimensional (2-D) transition-metal dichalcogenides (TMDCs) have distinct emission properties, which can be utilized for realizing ultrathin optoelectronic integrated systems in the future. Growing a large-area and strain-reduced monolayer 2-D material on a three-dimensional (3-D) substrate with microstructures or nanostructures is a crucial technique because the electronic band structure of TMDC atomic layers is strongly affected by the number of stacked layers and strain. In this study, a large-area and strain-reduced MoS2 monolayer was fabricated on a 3D substrate through a two-step growth procedure. The material characteristics and optical properties of monolayer TMDCs fabricated on the nonplanar substrate were examined. The growth of monolayer MoS2 on a cone-shaped sapphire substrate effectively reduced the tensile strain induced by the substrate by decreasing the thermal expansion mismatch between the 2-D material and the substrate. Monolayer MoS2 grown on the nonplanar substrate exhibited uniform strain reduction and luminescence intensity. The fabrication of monolayer MoS2 on a nonplanar substrate increased the light extraction efficiency. In the future, large-area and strain-reduced 2-D TMDC materials grown on a nonplanar substrate can be employed as novel light-emitting devices for applications in lighting, communication, and displays for the development of ultrathin optoelectronic integrated systems.
URI: http://scholars.ntou.edu.tw/handle/123456789/22783
ISSN: 1944-8244
DOI: 10.1021/acsami.9b05082
Appears in Collections:電機工程學系

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