http://scholars.ntou.edu.tw/handle/123456789/22854| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huei-min Huang | en_US |
| dc.contributor.author | Chiao-Yun Chang | en_US |
| dc.contributor.author | Tien-chang Lu | en_US |
| dc.contributor.author | Chi-chin Yang | en_US |
| dc.date.accessioned | 2022-11-01T05:49:29Z | - |
| dc.date.available | 2022-11-01T05:49:29Z | - |
| dc.date.issued | 2011-07 | - |
| dc.identifier.issn | 0013-4651 | - |
| dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/22854 | - |
| dc.description.abstract | The structural properties of a-plane AlGaN/GaN multiple quantum wells grown on the r-plane sapphire substrate have been characterized. The pentagonal and inverted octagonal surface pits, consisting of several non-polar and semi-polar crystalline facets, are clearly observed and distinguished. The Al incorporation efficiency of the non-polar and semi-polar facets of these special inverted octagonal surface pits has been verified in the order of (11 (2) under bar2) < (10<(12)under bar>) < (1<(1)under bar>00) approximate to (11 (2) under bar0) < (20<(2)under bar>1) by cathodoluminescence measurements at room temperature. The evolution of these inverted octagonal surface pits could be due to the results of interaction between different stacking faults. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610990] All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | ELECTROCHEMICAL SOC INC | en_US |
| dc.relation.ispartof | Journal of The Electrochemical Society | en_US |
| dc.subject | CHEMICAL-VAPOR-DEPOSITION | en_US |
| dc.subject | GALLIUM NITRIDE | en_US |
| dc.subject | PHASE EPITAXY | en_US |
| dc.subject | STACKING-FAULTS | en_US |
| dc.subject | GAN | en_US |
| dc.subject | SAPPHIRE | en_US |
| dc.subject | PHOTOLUMINESCENCE | en_US |
| dc.subject | OVERGROWTH | en_US |
| dc.subject | EMISSION | en_US |
| dc.subject | GROWTH | en_US |
| dc.title | Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells | en_US |
| dc.type | journal article | en_US |
| dc.identifier.doi | 10.1149/1.3610990 | - |
| dc.identifier.isi | 000293175600064 | - |
| dc.relation.journalvolume | 158 | en_US |
| dc.relation.journalissue | 9 | en_US |
| dc.relation.pages | H915-H918 | en_US |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.fulltext | no fulltext | - |
| item.languageiso639-1 | en_US | - |
| item.cerifentitytype | Publications | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
| crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
| crisitem.author.dept | Department of Electrical Engineering | - |
| crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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