http://scholars.ntou.edu.tw/handle/123456789/23020| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Min-Yung Ke | en_US |
| dc.contributor.author | Tzu-Chun Lu | en_US |
| dc.contributor.author | Sheng-Chieh Yang | en_US |
| dc.contributor.author | Cheng-Pin Chen | en_US |
| dc.contributor.author | Yun-Wei Cheng | en_US |
| dc.contributor.author | Liang-Yi Chen | en_US |
| dc.contributor.author | Cheng-Ying Chen | en_US |
| dc.contributor.author | Jr-Hau He | en_US |
| dc.contributor.author | JianJang Huang | en_US |
| dc.date.accessioned | 2022-11-08T06:46:46Z | - |
| dc.date.available | 2022-11-08T06:46:46Z | - |
| dc.date.issued | 2009-12 | - |
| dc.identifier.issn | 1094-4087 | - |
| dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/23020 | - |
| dc.description.abstract | In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | Optical Society of America | en_US |
| dc.relation.ispartof | Optics express | en_US |
| dc.subject | EMITTING-DIODES | en_US |
| dc.subject | ZNO | en_US |
| dc.title | UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers | en_US |
| dc.type | journal article | en_US |
| dc.identifier.doi | 10.1364/OE.17.022912 | - |
| dc.identifier.isi | 000272761300069 | - |
| dc.relation.journalvolume | 17 | en_US |
| dc.relation.journalissue | 25 | en_US |
| dc.relation.pages | 22912-22917 | en_US |
| item.fulltext | no fulltext | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| item.cerifentitytype | Publications | - |
| item.languageiso639-1 | en_US | - |
| crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
| crisitem.author.dept | College of Engineering | - |
| crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
| crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 光電與材料科技學系 | |
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