Skip navigation
  • 中文
  • English

DSpace CRIS

  • DSpace logo
  • 首頁
  • 研究成果檢索
  • 研究人員
  • 單位
  • 計畫
  • 分類瀏覽
    • 研究成果檢索
    • 研究人員
    • 單位
    • 計畫
  • 機構典藏
  • SDGs
  • 登入
  • 中文
  • English
  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/23167
DC 欄位值語言
dc.contributor.authorJosé Ramón Durán Retamalen_US
dc.contributor.authorCheng-Ying Chenen_US
dc.contributor.authorKun-Yu Laien_US
dc.contributor.authorJr-Hau Heen_US
dc.date.accessioned2022-11-15T06:56:43Z-
dc.date.available2022-11-15T06:56:43Z-
dc.date.issued2012-12-
dc.identifier.isbn9780367576684-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/23167-
dc.description.abstractThis chapter discusses the transport mechanism and surface-related transport properties of zinc oxide (ZnO) nanostructures, with particular interest in reports of the mobility exceeding state-of-the-art planar devices observed in ZnO nanowire (NW) devices. Most of ZnO nanostructures are grown with the three main methods: vapor–liquid–solid (VLS) process, solution-based chemical synthesis, and chemical vapor deposition. ZnO nanostructures synthesized by VLS processes are produced through the crystallization from the alloys at their supersaturated states. Solution-based chemical synthesis is also referred as the hydrothermal method. Photoluminescence analysis is the most widely applied technique to investigate optical properties of ZnO nanostructures, since it can estimate the tightly bound excitons, the bandgap energy, and related defect transitions of ZnO. Polarized photodetection of both ultraviolet and visible light shows that the photoconductivity of ZnO NW is maximized when incident light is polarized parallel to the NW axis.en_US
dc.language.isoen_USen_US
dc.publisherCRC Pressen_US
dc.relation.ispartofHandbook of Zinc Oxide and Related Materials:Volume Two, Devices and Nano-Engineeringen_US
dc.title"ZnO-based nanostructures," Chapter 4 in Handbook of Zinc Oxide and Related Materials: Volume Two, Devices and Nano-Engineeringen_US
dc.typebook chapteren_US
dc.relation.pages43en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypebook chapter-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptCollege of Engineering-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
顯示於:光電與材料科技學系
顯示文件簡單紀錄

Page view(s)

130
checked on 2025/6/30

Google ScholarTM

檢查

Altmetric

TAIR相關文章


在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。

瀏覽
  • 機構典藏
  • 研究成果檢索
  • 研究人員
  • 單位
  • 計畫
DSpace-CRIS Software Copyright © 2002-  Duraspace   4science - Extension maintained and optimized by NTU Library Logo 4SCIENCE 回饋