Facile synthesis of <i>β</i>-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Abstract

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing beta-Ga(2)O(3)via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized beta-Ga(2)O(3)was fabricated as thin film transistors (TFT). The beta-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm(2)Vs(-1)) and a good current ratio (I-on/I-off) of 2.06 x 10(5). To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in beta-Ga2O3TFT devices, increasing the electrical device mobility by similar to 8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the beta-Ga(2)O(3)networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.