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  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/25198
標題: Exciplex-forming cohost systems with 2,7-dicyanofluorene acceptors for high efficiency red and deep-red OLEDs
作者: Chen, Yi-Sheng
Lin, I-Hung
Huang, Hsin-Yuan
Liu, Shun-Wei
Hung, Wen-Yi 
Wong, Ken-Tsung
公開日期: 2024
出版社: NATURE PORTFOLIO
卷: 14
期: 1
來源出版物: SCIENTIFIC REPORTS
摘要: 
Two 2,7-dicyaonfluorene-based molecules 27-DCN and 27-tDCN are utilized as acceptors (A) to combine with hexaphenylbenzene-centered donors (D) TATT and DDT-HPB for probing the exciplex formation. The photophysical characteristics reveal that the steric hindered 27-tDCN not only can increase the distance of D and A, resulting in a hypsochromic emission, but also dilute the concentration of triplet excitons to suppress non-radiative process. The 27-tDCN-based exciplex-forming blends exhibit better photoluminescence quantum yield (PLQY) as compared to those of 27-DCN-based pairs. In consequence, among these D:A blends, the device employing DDT-HPB:27-tDCN blend as the emissiom layer (EML) exhibits the best EQE of 3.0% with electroluminescence (EL) lambda max of 542 nm. To further utilize the exciton electrically generated in exciplex-forming system, two D-A-D-configurated fluorescence emitter DTPNT and DTPNBT are doped into the DDT-HPB:27-tDCN blend. The nice spectral overlap ensures fast and efficient Forster energy transfer (FRET) process between the exciplex-forming host and the fluorescent quests. The red device adopting DDT-HPB:27-tDCN:10 wt% DTPNT as the EML gives EL lambda max of 660 nm and maximum external quantum efficiency (EQEmax) of 5.8%, while EL lambda max of 685 nm and EQE of 5.0% for the EML of DDT-HPB:27-tDCN:10 wt% DTPNBT. This work manifests a potential strategy to achieve high efficiency red and deep red OLED devices by incorporating the highly fluorescent emitters to extract the excitons generated by the exciplex-forming blend with bulky acceptor for suppressing non-radiative process.
URI: http://scholars.ntou.edu.tw/handle/123456789/25198
ISSN: 2045-2322
DOI: 10.1038/s41598-024-52680-6
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