Piezoresistive modulation in WS2 nano-point transistors via piezoelectric actuation

Abstract

We report a mechanically gated transistor that exploits coupled piezoelectric actuation and piezoresistive modulation in a WS2 nano-tip point-contact Schottky junction. A conformal WS2 shell is formed on an electrochemically etched tungsten nano-tip, yielding a W/WS2/Al heterostructure with high strain sensitivity and robust rectifying behavior. Integration with a piezoelectric actuator enables three-terminal operation, in which voltageinduced mechanical deformation modulates contact pressure and current transport at the nano-junction. Electrical measurements demonstrate continuous gate-controlled conduction and kilohertz-frequency switching with asymmetric propagation delays, directly evidencing electromechanical coupling effects. This strain-mediated architecture establishes a mechanically gated transistor modality that complements conventional electrostatic CMOS devices and is promising for low reverse current switching and adaptive strain sensing.