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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/4435
DC 欄位值語言
dc.contributor.authorHsieh, H. H.en_US
dc.contributor.authorWu Kaien_US
dc.contributor.authorJang, W. L.en_US
dc.contributor.authorLee, P. Y.en_US
dc.contributor.authorWang, W. H.en_US
dc.contributor.authorRong-Tan Huangen_US
dc.date.accessioned2020-11-19T00:37:45Z-
dc.date.available2020-11-19T00:37:45Z-
dc.date.issued2007-03-
dc.identifier.issn0030-770X-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/4435-
dc.description.abstractThe oxidation behavior of two Cu-base bulk metallic glasses (BMGs), having compositions Cu–30Zr–10Ti and Cu–20Zr–10Ti–10Hf (in at.%), was studied over the temperature range of 350–500 °C in dry air. In general, the oxidation kinetics of both BMGs followed the parabolic rate law, with the oxidation rates increasing with increasing temperature. The addition of Hf slightly reduced the oxidation rates at 350–400 °C, while the opposite results observed at higher temperatures. It was found that the oxidation rates of both BMGs were significantly higher than those of polycrystalline pure-Cu. The scales formed on both BMG alloys were strongly composition dependent, consisting of mostly CuO/Cu2O and minor amounts of cubic-ZrO2 and ZrTiO4 for the ternary BMG, and of CuO, cubic-ZrO2, and Zr5Ti7O24 for the quaternary BMG. The formation of ternary oxides (ZrTiO4 and Zr5Ti7O24) was inferred to be responsible for the fast oxidation rates of the BMGs.en_US
dc.language.isoen_USen_US
dc.publisherSpringer Natureen_US
dc.relation.ispartofOxidation of Metalsen_US
dc.subjectBulk metallic alloysen_US
dc.subjectCuOen_US
dc.subjectCu2Oen_US
dc.subjectZrO2en_US
dc.subjectZrTiO4en_US
dc.subjectZr5Ti7O24en_US
dc.titleThe oxidation behavior of Cu–Zr–Ti–base bulk metallic glasses in air at 350–500 °Cen_US
dc.typejournal articleen_US
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.doi10.1007/s11085-007-9049-y-
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.doi<Go to ISI>://WOS:000244890000003-
dc.identifier.url<Go to ISI>://WOS:000244890000003-
dc.relation.journalvolume67en_US
dc.relation.journalissue3-4en_US
dc.relation.pages179–192en_US
item.openairetypejournal article-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.orcidhttps://orcid.org/0000-0001-8791-7775-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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