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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/4451
DC 欄位值語言
dc.contributor.authorWu Kaien_US
dc.contributor.authorCheng, F. P.en_US
dc.contributor.authorLiao, C. Y.en_US
dc.contributor.authorLi, C. C.en_US
dc.contributor.authorKai, J. J.en_US
dc.contributor.authorRong-Tan Huangen_US
dc.date.accessioned2020-11-19T00:37:47Z-
dc.date.available2020-11-19T00:37:47Z-
dc.date.issued2018-05-
dc.identifier.issn0254-0584-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/4451-
dc.description.abstractThe oxidation of three quinary FeCoNiCrSix high-entropy alloys (x = 0.25, 0.5 and 1.0) was investigated at 700–900 °C in dry air and at 900 °C in various O2-containing atmospheres (FeCoNiCrSi0.5 only). The two lower Si-content alloys contained an FCC single-phase structure, while the equimolar alloy had a BCC plus FCC dual-phase structure. The oxidation kinetics of all the alloys followed the parabolic rate law, with their oxidation rate constants increased with increasing temperature and decreasing Si content. In addition, the oxidation rate constants of the FeCoNiCrSi0.5 alloy steadily increased with increasing oxygen partial pressure, indicative of a typical oxide scale exhibiting a p-type semiconductivity. The scales formed on all the alloys consisted mostly of Cr2O3 and minor amounts of SiO2 (α-quartz). The oxidation mechanism of the HEAs is due primarily to outward diffusion of cations.en_US
dc.language.isoen_USen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Chemistry and Physicsen_US
dc.subjectFeCoNiCrSix high-entropy alloysen_US
dc.subjectOxidationen_US
dc.subjectCr2O3en_US
dc.subjectSiO2 (α-quartz)en_US
dc.titleThe oxidation behavior of the quinary FeCoNiCrSix high-entropy alloysen_US
dc.typejournal articleen_US
dc.identifier.doi<Go to ISI>://WOS:000429762200047-
dc.identifier.doi<Go to ISI>://WOS:000429762200047-
dc.identifier.doi10.1016/j.matchemphys.2017.06.017-
dc.identifier.doi<Go to ISI>://WOS:000429762200047-
dc.identifier.doi<Go to ISI>://WOS:000429762200047-
dc.identifier.url<Go to ISI>://WOS:000429762200047-
dc.relation.journalvolume210en_US
dc.relation.pages362-369en_US
item.openairetypejournal article-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.grantfulltextnone-
item.fulltextno fulltext-
item.languageiso639-1en_US-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.orcidhttps://orcid.org/0000-0001-8791-7775-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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