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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/4458
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dc.contributor.authorWu Kaien_US
dc.contributor.authorHsieh, H. H.en_US
dc.contributor.authorChen, Y. R.en_US
dc.contributor.authorWang, Y. F.en_US
dc.contributor.authorDong, C.en_US
dc.date.accessioned2020-11-19T00:37:48Z-
dc.date.available2020-11-19T00:37:48Z-
dc.date.issued2007-11-
dc.identifier.issn0966-9795-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/4458-
dc.description.abstractThe oxidation behavior of the Zr53Ni23.5Al23.5 bulk metallic glass (BMG) and its crystalline counterpart was investigated over the temperature range of 400–600 °C in dry air and pure oxygen. In general, the oxidation kinetics of BMG followed the single- or two-stage parabolic rate law at T ≤ 500 °C, with rate constants (Kp values) generally increased with temperature. Conversely, three-stage parabolic kinetics were observed for BMG at T ≥ 550 °C, with Kp values decreased with increasing temperature. The oxidation rate constants for the BMG alloy are slightly higher than those for crystalline alloy at T ≤ 500 °C. In addition, Kp values of BMG were nearly independent of partial pressure of oxygen, implying a typical scaling behavior with a n-type semiconductivity. The scales formed on the BMG is temperature-dependent, consisting mainly of tetragonal-ZrO2 (t-ZrO2) and minor amounts of Al2O3 at T ≤ 475 °C. At higher temperatures (T ≥ 500 °C), some monoclinic-ZrO2 (m-ZrO2) were also detected, and its amounts increased with increasing temperature. The BMG substrate began to form the crystalline Zr2Ni, Zr2Al, and ZrNiAl phases beneath the scales after oxidation at T ≥ 450 °C.en_US
dc.language.isoen_USen_US
dc.relation.ispartofIntermetallicsen_US
dc.subjectB. Oxidationen_US
dc.subjectB. Glasses, metallicen_US
dc.subjectB. Phase transformationsen_US
dc.titleOxidation behavior of an Zr53Ni23.5Al23.5 bulk metallic glass at 400–600 °Cen_US
dc.typejournal articleen_US
dc.identifier.doi<Go to ISI>://WOS:000250419900009-
dc.identifier.doi10.1016/j.intermet.2007.05.006-
dc.identifier.doi<Go to ISI>://WOS:000250419900009-
dc.identifier.doi<Go to ISI>://WOS:000250419900009-
dc.identifier.url<Go to ISI>://WOS:000250419900009
dc.relation.journalvolume15en_US
dc.relation.journalissue11en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypejournal article-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.orcidhttps://orcid.org/0000-0001-8791-7775-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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